In this paper, high-quality wafer-scale monolayer TiO2 films were synthesized via atomic layer deposition and their main characteristics were investigated. The deposited TiO2 monolayer films were subsequently utilized in photodetectors… Click to show full abstract
In this paper, high-quality wafer-scale monolayer TiO2 films were synthesized via atomic layer deposition and their main characteristics were investigated. The deposited TiO2 monolayer films were subsequently utilized in photodetectors (PDs), which demonstrated considerable optoelectronic performance with ultrafast response (30 μs) and recovery (63 μs) time, high on/off ratio (220), good reversibility, and great long-term stability (less than 2% variation after 1000 cycles). The photoresponsivity (Rλ) and external quantum efficiency of 0.352 A/W and 109.12% were, respectively, attained at the incident laser power density of 118 mW/cm2 ($\lambda = \text{400}\; \text{nm}$) and $V_{{\rm{DS}}} = \text{1}\; \text{V}$. These photoelectrical characteristics of the monolayer TiO2-based PDs confirmed that this TiO2 nanostructure could be an excellent candidate for various smart and portable applications such as UV-detection devices, photoswitches, high-speed optical communications, and image sensors.
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