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Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures
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We propose a new design for covered source–channel tunnel field-effect transistors (CSC-TFETs) with trench gate structures. The I–V characteristics, on/off current ratio, subthreshold swing, and band-to-band tunneling rate are analyzed… Click to show full abstract
We propose a new design for covered source–channel tunnel field-effect transistors (CSC-TFETs) with trench gate structures. The I–V characteristics, on/off current ratio, subthreshold swing, and band-to-band tunneling rate are analyzed using a commercial device simulator. Our proposed CSC-TFETs exhibit an on/off current ratio of approximately 1010, an on-current of approximately 10−5 A/μm at room temperature, and a subthreshold swing of less than 40 mV/decade. In addition, the on-current of the CSC-TFETs is ∼233 times that of conventional TFETs, demonstrating that the switching characteristics are superior to those of other silicon-based TFETs. Moreover, a CSC-TFET inverter is characterized by SPICE calibration and provides a high frequency of approximately 1 GHz at a supply voltage of 1.0 V.
