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In this letter, a fully analytical compact drain current model of back-gated two-dimensional (2D) negative capacitance (NC) FET including interface trap charges has been developed by solving Poisson's, drift-diffusion and… Click to show full abstract
In this letter, a fully analytical compact drain current model of back-gated two-dimensional (2D) negative capacitance (NC) FET including interface trap charges has been developed by solving Poisson's, drift-diffusion and 1-D Landau-Khalatnikov equations, and it is validated against the experimental data. In addition, the impact of interface trap charges on the electrical characteristics of the back-gated 2D NC-FET is investigated systematically based on the model. It is found that the subthreshold swing (SS) and on-off current ratio (Ion/Ioff) are seriously degraded because of the presence of interface traps at 2D channel/oxide interface and 2D NC-FET with a big tf is more immune to the degradation induced by the interface traps. In addition, the underlying physics are elucidated by the capacitance matching of 2D NC-FET.
Journal Title: IEEE Transactions on Nanotechnology
Year Published: 2019
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