LAUSR

In this work, a novel design of ArcTFET based on Charge-Plasma and Gate-Stack (CP-GS-ArcTFET) is proposed for the first time. The precise detection of breast cancer biomarker (C-erbB-2) through serum should not be limited by HEMT devices but should be explored with other novel devices also. In this regard, investigation in above-mentioned device is carried out for the detection of C-erbB-2 protein. In CP-GS-ArcTFET, various central angles (θ) are considered for observing the electrical parameters e.g., drain current (Id), threshold voltage (VT), and subthreshold slope (SS). The transconductance (gm), its derivatives (gm2 and gm3), and analog performance indicators such as cut-off-frequency (fT), gain-bandwidth-product (GBP), intrinsic-device-delay (τ), and transconductance-frequency-product (TFP) have also been analysed for these θs. The drain current, SS, and VT has been improved with the central angles. In the proposed device, the concept of charge equivalence of C-erbB-2 with its quantities (in μg/ml) is used for analysing sensitivity in Silvaco ATLAS TCAD. The device sensing is observed by changing C-erbB-2 concentrations in serum. The sensitivity concerning ON-current, OFF-current and current-ratio has been addressed for healthy and diseased individuals. The impact of θ on sensitivity is also observed. With increasing θ, the sensitivities SON and SOFF decrease; whereas, the sensitivity Scurrent ratio increases for the C-erbB-2 concentration of 210 μg/ml. The ION/IOFF and SS in CP-GS-ArcTFET are 4.5×109 and 35.97 mV/decade, respectively. The capability of CP-GS-ArcTFET to boost the performance is established with the decrease in leakage, enhancing ION/IOFF, steeper SS with the aids of VT reduction.