Photo from academic.microsoft.com
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system… Click to show full abstract
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!