LAUSR

Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 \times 10^{13}$ n/cm². In the second test, CBRAM cells were bombarded with 200 keV Si²⁺ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 \times 10^{{{13}}}$ n/cm², the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.