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Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation… Click to show full abstract
Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE crosssectional responses. Results show that angular SEU crosssectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate.
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2018
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