Heavy-ion experiments demonstrated that reducing the distance between nMOS transistor and n-well can reduce N-hit (i.e., hit nMOS transistor) single-event transient (SET) pulsewidth. This principle can be applied for radiation-harden-by-design… Click to show full abstract
Heavy-ion experiments demonstrated that reducing the distance between nMOS transistor and n-well can reduce N-hit (i.e., hit nMOS transistor) single-event transient (SET) pulsewidth. This principle can be applied for radiation-harden-by-design standard cell design without any area overhead. TCAD simulations indicated that the guard drain effect of the n-well and the enhanced restore current of pMOS transistor are responsible for the N-hit SET pulsewidth reduction.
Keywords:
nmos transistor;
transistor;
single event;
event transient
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2018
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Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!