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We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced… Click to show full abstract
We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by particle strike in pMOSFET (p-hits) or nMOSFET (n-hits) is distinguished by the MCU pattern. Analysis of MCU pattern shows that both p-hits MCU and n-hits MCU are enhanced by TID, and they have different mechanisms. Enhancement of n-hits MCU is due to the positive threshold voltage shift ( $\Delta V$ th) of the pull-up pMOSFET, while p-hits MCU is strengthened by the increase in the equivalent resistance of p-well contacts caused by oxide-trapped charges (Not) trapped in the shallow trench isolation.
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2019
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