Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and… Click to show full abstract
Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when $\vert \text {V}_{\mathrm {DS}}\vert $ increases, due to a shunt effect.
               
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