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The effects of total ionizing dose on 3-D NAND floating gate cells with vertical architecture are analyzed as a function of the cell depth in the pillar. The focus of… Click to show full abstract
The effects of total ionizing dose on 3-D NAND floating gate cells with vertical architecture are analyzed as a function of the cell depth in the pillar. The focus of this work is on TID-induced threshold voltage shifts, but the implications on the raw bit error rates are also discussed. Underlying mechanisms are elucidated, concluding that due to the manufacturing process and the geometry of the pillars, the effects of total dose are larger at the bottom than at the top of the cell array.
Keywords:
threshold voltage;
voltage;
dependence threshold;
depth dependence;
voltage shift;
shift flash
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2021
Link to full text (if available)
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Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2021
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!