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We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The… Click to show full abstract
We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.
Keywords:
testing single;
laser testing;
laser;
backside laser;
gan power
Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2021
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Journal Title: IEEE Transactions on Nuclear Science
Year Published: 2021
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!