Voltage-controlled oscillators (VCOs) are a fundamental building block in all frequency synthesis circuits and have a heavy influence on the overall system’s electrical performance. Moreover, when operating in a radiation… Click to show full abstract
Voltage-controlled oscillators (VCOs) are a fundamental building block in all frequency synthesis circuits and have a heavy influence on the overall system’s electrical performance. Moreover, when operating in a radiation environment, VCOs have been identified as a dominant source of sensitivity to both single-event upsets (SEUs) and total ionizing dose (TID). Hence, in this work, we present the design and analysis of three LC-VCO topologies in a 22-nm FinFET process with variations in the varactor and LC-tail filter to study circuit-level techniques for implementing high-performance VCOs that are robust to SEU and TID. The three VCOs are integrated on a single die and operate over a 43.9% tuning range from 16 to 25 GHz with a peak FoMT of 187.38 dBc/Hz. Heavy ion SEU testing was performed at the Texas A&M Cyclotron Institute up to a linear energy transfer (LET) of 70 MeV
               
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