A novel carrier-based unipolar-sinusoidal pulse width modulation (SPWM)-oriented modulation technique with synchronous rectification for isolated bidirectional single-stage high-frequency-ac link dc-ac converters using SiC MOSFET is presented in this paper. The… Click to show full abstract
A novel carrier-based unipolar-sinusoidal pulse width modulation (SPWM)-oriented modulation technique with synchronous rectification for isolated bidirectional single-stage high-frequency-ac link dc-ac converters using SiC MOSFET is presented in this paper. The dc-ac converter is composed of a full-bridge (FB) inverter cascaded with a cycloconverter through a high-frequency transformer. A carrier-based unipolar-SPWM-oriented modulation technique with synchronous rectification is proposed to realize zero-voltage-switching (ZVS) for the FB inverter and zero-current or zero-voltage-switching (ZVS/ZCS) for the cycloconverter in all load ranges, and to suppress the voltage spikes introduced by the transformer leakage inductance as well. In order to increase the switching frequency, efficiency, and power density, this paper proposes to utilize SiC MOSFETs for the converter. Synchronous rectification is implemented to further increase the converter efficiency. With the novel modulation technique, there are two switches in the cycloconverter that are continuously on at each interval, which eliminates on-fourth of the switching loss. A simulation model and a 400 VDC-240 VAC, 1.2=kW prototype have been developed to validate the effectiveness and performance of the proposed unipolar soft-switching modulation technique and SiC converter.
               
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