LAUSR

This paper presents a methodology to analyze the substrate noise coupling and reduce their effects in smart power integrated circuits. This methodology considers the propagation of minority carriers in the substrate. Hence, it models the lateral bipolar junction transistors that are layout dependent and are not modeled in conventional substrate extraction tools. It allows the designer to simulate substrate currents and check their effects on circuits functionality. The proposed methodology employs a dedicated tool for substrate network generation referred to as AUTOMICS. We applied the methodology on two test cases. The first case is a dc–dc buck converter chip fabricated with a 0.35 $\mu\text{m}$ high-voltage-CMOS technology. The dc coupling current between the switches and the bandgap circuit is simulated and verified with measurements. The second test case is an automotive industrial chip that has a latch-up failure due to substrate coupling. In transient simulations, the failure has been reproduced as in measurements. This highlights the stronghold of the methodology since it can be used to prevent this type of failures before fabrication. The proposed methodology can reduce the number of redesigns in the automotive industry. Hence, it shortens the time-to-market, improves the robustness of the design, and reduces the cost.