LAUSR

At present, it is usually necessary to use fast recovery type diodes to cooperate with the fast switching actions of fully controlled devices such as insulated-gate bipolar transistors (IGBTs). However, the specific nature of the working conditions of the diode-bridge bidirectional solid-state switch (DBSS) provides an opportunity to apply standard recovery diodes for this purpose, which helps to reduce the cost of the bidirectional switch. This letter presents the self-oscillation phenomenon that is caused by the recovery processes of the diodes in a DBSS. Then, the recovery effects of these diodes in different topologies are analyzed from the perspective of the DBSS and optimized designs for both the snubber circuit and the energy-absorbing circuit are proposed. A 500-kV dc breaker is realized based on the proposed DBBS using the standard recovery diodes, which can work reliably with IGBTs, and the cost of the resulting dc circuit breakers is greatly reduced.