LAUSR

Compared to Si FETs, when the main GaN FET is in full zero voltage switching condition, maximum switching loss reduction can be achieved. Therefore, in this article, an active clamp flyback converter with GaN devices that implements fast ZVS by using the proposed dynamic resonant period control (DRPC) technique can reduce large transformer leakage inductance energy loss on the active resonant circuit. As the loading changes, the DRPC technique can dynamically adjust the on-time in auxiliary switch to prevent large voltage stress on the components in the primary side. In full load condition, the leakage energy loss can be reduced, thereby transferring more energy to the secondary side with maximum efficiency up to 94%.