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Rise-Time Improvement in Bipolar Pulse Solid-State Marx Modulators

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This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the… Click to show full abstract

This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the stray capacitances influence the energy transfer from the Marx modulator capacitors to the load affecting the bipolar (negative and/or positive) pulse rise time. This paper deals with the structure design to reduce the influence of the stray capacitance and to improve the pulse rise time of these bipolar solid-state Marx modulators. A four-stage laboratory prototype of the two topologies has been assembled using 1200-V insulated gate bipolar transistors and diodes, operating with 1000-V dc input voltage and 1-kHz frequency, producing 4-kV bipolar pulses, with 5- $\mu \text{s}$ pulse duration and 120-ns rise time, into a resistive load.

Keywords: solid state; marx modulators; marx; rise time; state marx

Journal Title: IEEE Transactions on Plasma Science
Year Published: 2017

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