LAUSR

In this work, the impacts of oxygen (O₂) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O₂ plasma treatment, the T-TFT exhibits that the minimum leakage current is suppressed from 134 to 7 pA and the subthreshold swing (SS) is decreased from 0.602 to 0.508 V/decade. In addition, the degradation of SS and threshold voltage ( $V_{\text {TH}}$ ) of T-TFT with O₂ plasma after NBTI stress for 1000 s are suppressed from 0.779 to 0.319 V/decade and 1.28 to −0.82 V, respectively. The degradation of on-state current is also improved significantly from −87% to −40% when the T-TFT is passivated by the O₂ plasma. Moreover, the T-TFT with O₂ plasma exhibits less stress voltage-dependent electrical degradation of NBTI than it without O₂ plasma. When the stress voltage of NBTI increases, two-step $V_{\text {TH}}$ shift behavior of T-TFT with O₂ plasma is observed due to the competition of hole trapping effect and SS degradation effect. Furthermore, the T-TFT with O₂ plasma shows less electrical degradation quantity than it without O₂ plasma when the temperature of NBTI is increased from 25 °C to 75 °C.