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In this paper, impact of parasitic ground plane and via stack on device parameters is investigated at millimeter-wave frequencies and further addressed by an improved general cascade procedure with an… Click to show full abstract
In this paper, impact of parasitic ground plane and via stack on device parameters is investigated at millimeter-wave frequencies and further addressed by an improved general cascade procedure with an additional short dummy up to 110 GHz for the first time. The ground inductance is extracted accurately up to millimeter-wave range by applying a generalized two-port network for adapters and the determined ground inductance value is verified by analytical results. The generalized black-box model is utilized in order to take the distributed effects of adapters into account at millimeter-wave frequencies. This modified method can obtain frequency-independent intrinsic elements in the millimeter-wave range, verifying the presented approach.
Journal Title: IEEE Transactions on Semiconductor Manufacturing
Year Published: 2017
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