A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high… Click to show full abstract
A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high resistance (HR) measurement typemeasures the resistance of 490,000 cells in the range of 2.85 $\text{k}{\Omega }- 10\,\,\text{M}{\Omega }$ within 497 ms. The low resistance (LR)measurement type measures the resistance of 10,000 cells in the range of $390\,\,{\Omega }- 10\,\,\text{M}{\Omega }$ within11 ms. Various memory materials can be commonly tested only by forming materials on top of the platform. We measured the resistance of N+Poly-Si resistors formed by the platform fabrication process to verify the circuit operation. We also measured the on-resistance of selectors (RON) by shorting each cell to GND for the confirmation of the background resistance. Moreover, we formed ${\alpha }$ -Si on the platform by PE-CVD to test the process of forming materials on the platform. Then the resistance of ${\boldsymbol{\alpha }}$ -Si and its temporal variation showing random telegraph noise behaviors were measured statistically.
