LAUSR

Remote plasma sources (RPSs) are being developed for low damage materials processing during semiconductor fabrication. Plasmas sustained in NF3 are often used as a source of F atoms. NF3 containing gas mixtures such as NF3/O2 and NF3/H2 provide additional opportunities to produce and control desirable reactive species such as F and NO. In this paper, results from computational investigations of RPS sustained in capacitively coupled plasmas are discussed using zero-dimensional global and two-dimensional reactor scale models. A comprehensive reaction mechanism for plasmas sustained in Ar/NF3/O2 was developed using electron impact cross sections for NF2 and NF calculated by ab initio molecular R-matrix methods. For validation of the reaction mechanism, results from the simulations were compared with optical emission spectroscopy measurements of radical densities. Dissociative attachment and dissociative excitation of NFx are the major sources of F radicals. The exothermicity from these Franck–Condon dissocia...