LAUSR

The authors report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. The ALE process utilizes the same chemistry previously demonstrated in the atomic layer deposition of aluminum fluoride thin films, and can therefore be exploited to remove the surface oxide from metallic aluminum and replace it with thin fluoride layers in order to improve the performance of ultraviolet aluminum mirrors. This ALE process is modified relative to existing methods through the use of a chamber conditioning film of lithium fluoride, which is shown to enhance the loss of fluorine surface species and results in conformal layer-by-layer etching of aluminum oxide films. Etch properties were explored over a temperature range of 225–300 °C with the Al2O3 etch rate increasing from 0.8 to 1.2 A per ALE cycle at a fixed HF exposure of 60 ms per cycle. The effective etch ...