An oxide layer with a known thickness and chemistry was grown on delta stabilized Pu and sputtered with 1–5 keV Ar+ ions over a range of incident ion angle between 22°… Click to show full abstract
An oxide layer with a known thickness and chemistry was grown on delta stabilized Pu and sputtered with 1–5 keV Ar+ ions over a range of incident ion angle between 22° and 72°. From the time required to remove the oxide layer, sputter yields of PuO2 were calculated. The sputter yields appear to increase with higher Ar+ ion beam energy in the range of 1–5 keV at an incident sputter ion angle of 42° and were found to increase with a decreasing angle of incidence up to 62°. The degree of oxide reduction induced during the sputter process was found to vary with the incident sputter ion angle.
               
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