LAUSR

Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship of ZnO[0001]//AlN[0001] and ZnO [ 11 2 ¯ 0 ] / / AlN [ 11 2 ¯ 0 ]. Omega scans of the (0002) and ( 10 1 ¯ 0 ) reflections of ZnO demonstrate an improving crystalline quality for increasing deposition temperatures. An additional thermal postannealing step at 800 °C is found to be beneficial to further improve the crystal structure.