LAUSR

Abstract. We perform a device modeling study on an inverted-structure perovskite solar cell (PSC) with ZnO as an electron transport layer and NiOx as a hole transport layer (HTL). The influence of several parameters on solar cell performance is explored. The simulation indicates that the optimal values for the absorber thickness and the HTL thickness are 600 and 30 nm, respectively. Meanwhile, doping concentrations of NiOx and ZnO can significantly affect the device performance. Hole mobility of HTL larger than 0.1  cm2  /  V  ·  s is necessary for the effective hole transporting to the front contact. In addition, a front contact work function higher than 4.8 eV is more suitable for the inverted-structure PSCs. By optimizing these parameters, high-performance inverted-structure PSC with the efficiency of 21.28% is achieved. These research results are conducive to device design and fabrication of inverted PSCs.