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Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

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We report the layer-hybridized valley excitons in 2D hetero- and homobilayers manifested by band alignment and valley spin. Excitons in monolayer semiconductors have a large optical transition dipole for strong… Click to show full abstract

We report the layer-hybridized valley excitons in 2D hetero- and homobilayers manifested by band alignment and valley spin. Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species–dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.

Keywords: band alignment; valley spin; alignment valley; valley

Journal Title: Science Advances
Year Published: 2019

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