"Pore nucleation and growth in n-type Si during its electrochemical etching"

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A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places. Click to show full abstract

A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places.

Keywords: nucleation growth; pore nucleation; nucleation; growth type; electrochemical etching; type electrochemical

Journal Title: Doklady Chemistry
Year Published: 2017

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