Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si… Click to show full abstract
Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
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