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It has been shown experimentally that an electron-hole plasma forms in the surface layer at a depth of ~30 nm, followed by a transition to the metallic state, when GaAs… Click to show full abstract
It has been shown experimentally that an electron-hole plasma forms in the surface layer at a depth of ~30 nm, followed by a transition to the metallic state, when GaAs is exposed to femtosecond laser pulses with an intensity close to the melting threshold. This phenomenon is observed when laser pulses with photon energies are both smaller and larger than the band gap. The formation of an electron-hole plasma and an absorbing layer with metallic properties is mainly due to the mechanism of avalanche ionization by electron impact.
Keywords:
laser;
transition;
laser pulses;
absorbing layer;
femtosecond laser
Journal Title: High Temperature
Year Published: 2019
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Journal Title: High Temperature
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!