Photo by briangarrityphoto from unsplash
nSi–pCdTe heterostructures have been produced by growing a pCdTe layer on an nSi substrate using thermal evaporation in vacuum at a residual pressure of 10–3 Pa. We have studied the… Click to show full abstract
nSi–pCdTe heterostructures have been produced by growing a pCdTe layer on an nSi substrate using thermal evaporation in vacuum at a residual pressure of 10–3 Pa. We have studied the elemental concentration depth profiles across the pCdTe layer and obtained current–voltage curves and spectral characteristics of the nSi–pCdTe heterostructures.
Keywords:
nsi pcdte;
properties nsi;
fabrication properties;
pcdte heterojunctions
Journal Title: Inorganic Materials
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Inorganic Materials
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!