The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is… Click to show full abstract
The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during their manufacture.
               
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