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The observation of microwave-induced changes in the charge of a field effect transistor with a channel formed by a bilayer electron system has confirmed that microwave radiation induces a nonequilibrium… Click to show full abstract
The observation of microwave-induced changes in the charge of a field effect transistor with a channel formed by a bilayer electron system has confirmed that microwave radiation induces a nonequilibrium electron energy distribution function, which generates magneto-oscillations of the resistance of two-dimensional electron systems. The observed periodicity and beating of magneto-oscillations of the charge have been explained by the redistribution of electrons between the layers, which occurs because of the corresponding nonequilibrium occupation of electronic states.
Journal Title: Jetp Letters
Year Published: 2020
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