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N. A. Inogamova, b, c, *, S. A. Romashevskiyb, A. I. Ignatova, d, V. V. Zhakhovskya, b, V. A. Khokhlovc, E. M. Eganovae, E. A. Pershinae, and S. I. Ashitkovb… Click to show full abstract
N. A. Inogamova, b, c, *, S. A. Romashevskiyb, A. I. Ignatova, d, V. V. Zhakhovskya, b, V. A. Khokhlovc, E. M. Eganovae, E. A. Pershinae, and S. I. Ashitkovb a All-Russia Research Institute of Automatics, Moscow, 127055 Russia b Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow, 125412 Russia c Landau Institute for Theoretical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia d National Research Moscow State University of Civil Engineering, Moscow, 129337 Russia e Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, 119991 Russia *e-mail: [email protected] Received November 26, 2020; revised December 3, 2020; accepted December 3, 2020
Journal Title: JETP Letters
Year Published: 2021
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