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The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300… Click to show full abstract
The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В4С, В4С + В2О3, С + В2О3 + В4С, С + В2О3, С + В2О3 + НВО2, С + НВО2, С + В4С, and a В4С phase.
Keywords:
containing films;
chemical vapor;
borate precursor;
vapor deposition;
trimethyl borate;
boron containing
Journal Title: Russian Journal of Inorganic Chemistry
Year Published: 2018
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Journal Title: Russian Journal of Inorganic Chemistry
Year Published: 2018
Link to full text (if available)
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recommendations!