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Structure and Chemical Composition of Manganese-Doped GaSb Dislocations

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Electron microscopic observations showed that the preparation of magnetic semiconductor GaSb〈Mn〉 by melt quenching is accompanied by discrete manganese precipitation on GaSb dislocations, this precipitation generating inclusions sized from a… Click to show full abstract

Electron microscopic observations showed that the preparation of magnetic semiconductor GaSb〈Mn〉 by melt quenching is accompanied by discrete manganese precipitation on GaSb dislocations, this precipitation generating inclusions sized from a split micrometer to several micrometers. The chemical composition of microinclusions was determined by electron probe microanalysis. The superposition of the magnetic properties of compounds that are formed in the Mn–Sb system determines the magnetic properties of GaSb〈Mn〉.

Keywords: structure chemical; gasb dislocations; chemical composition; manganese doped; composition manganese

Journal Title: Russian Journal of Inorganic Chemistry
Year Published: 2018

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