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Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric… Click to show full abstract
Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga3Se4(100)с(2 × 2) and Ga2Se3(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.
Keywords:
100 111;
ordering ga2se3;
111 123;
gallium vacancy;
vacancy ordering
Journal Title: Crystallography Reports
Year Published: 2017
Link to full text (if available)
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Journal Title: Crystallography Reports
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!