Photo from archive.org
The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown… Click to show full abstract
The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.
Keywords:
non effects;
switch current;
gate switch;
impact non;
current sic;
sic thyristors
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!