LAUSR

Abstractp+–n0–n+ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm2. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10–2 Ω cm2), the electron drift velocity in the n0 base at electric fields higher than 106 V/cm (7.8 × 106 cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10–4 K–1).