Photo from archive.org
Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced… Click to show full abstract
Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–xSbx alloys is established.
Keywords:
graded gainsb;
compositionally graded;
buffer layers;
algainsb buffer;
gainsb algainsb
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!