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Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with… Click to show full abstract
Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are reported. The dependences of the width and shape of resonant levels on the high-frequency field amplitude are investigated. It is shown that, in these structures there are almost always conditions at which nonresonant scattering channels near the quantum levels can become absolutely transparent.
Journal Title: Semiconductors
Year Published: 2017
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