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Based on the fractional-order partial differential equation, the diffusion-drift charge-carrier transport in a semiconductor layer with a fractal structure under a longitudinal alternating electric field is simulated. The simulation showed… Click to show full abstract
Based on the fractional-order partial differential equation, the diffusion-drift charge-carrier transport in a semiconductor layer with a fractal structure under a longitudinal alternating electric field is simulated. The simulation showed that the space–time distributions of carriers are broadened and asymmetric in layers with a fractal structure. Under certain conditions, the effect of charge oscillation frequency doubling in an external alternating electric field is observed.
Journal Title: Semiconductors
Year Published: 2017
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