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Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014… Click to show full abstract
Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a temperature of 700°C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.
Journal Title: Semiconductors
Year Published: 2017
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