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This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their… Click to show full abstract
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
Keywords:
germanium nanocrystals;
tight binding;
silicon germanium;
nanocrystals tight
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
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recommendations!