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It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these… Click to show full abstract
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
Keywords:
alas based;
alas heterojunction;
gaas alas;
based heterostructures
Journal Title: Semiconductors
Year Published: 2017
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Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!