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The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of… Click to show full abstract
The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the InxGa1–xP alloy. The two methods yield close results.
Journal Title: Semiconductors
Year Published: 2017
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