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A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of CdxHg1–xTe solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is… Click to show full abstract
A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of CdxHg1–xTe solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and corresponding wavenumber in the room-temperature spectral dependence of the reflectance are determined. The heavy hole density is established using calculated calibration curves. It is shown that in constructing the calibration curves, it is necessary to take into account the interaction of plasma oscillations with longitudinal optical phonons.
Journal Title: Semiconductors
Year Published: 2017
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