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Abstractn-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V.… Click to show full abstract
Abstractn-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.
Keywords:
gasb;
heterostructure single;
inas gasb;
gasb heterostructure;
gasb inas
Journal Title: Semiconductors
Year Published: 2018
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Journal Title: Semiconductors
Year Published: 2018
Link to full text (if available)
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recommendations!