It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band… Click to show full abstract
It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.
               
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