Photo from wikipedia
At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films… Click to show full abstract
At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF2(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 103 times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.
Journal Title: Semiconductors
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!